Transistor with a low-k sidewall spacer and method of making same

ABSTRACT

A transistor is formed by defining a gate stack on top of a semiconductor layer. The gate stack includes a gate dielectric and a gate electrode. A layer of a first dielectric material, having a first dielectric constant, is deposited on side walls of the gate stack to form sacrificial sidewall spacers. Raised source-drain regions are then epitaxially grown on each side of the gate stack adjacent the sacrificial sidewall spacers. The sacrificial sidewall spacers are then removed to produce openings between each raised source-drain region and the gate stack. A layer of a second dielectric material, having a second dielectric constant less than the first dielectric constant, is then deposited in the openings and on side walls of the gate stack to form low-k sidewall spacers.

CROSS REFERENCE TO RELATED APPLICATION

This application is a divisional application from U.S. applicationpatent Ser. No. 14/676,369 filed Apr. 1, 2015, the disclosure of whichis incorporated by reference.

TECHNICAL FIELD

The present invention relates to the fabrication of integrated circuitsand, more particularly, to a process for fabricating a transistor havinga low-k sidewall spacer.

BACKGROUND

Reference is now made to FIGS. 1-9 showing process steps for fabricatingan integrated circuit transistor device such as a MOSFET transistor. Itwill be understood that the illustrations provided do not necessarilyshow the features drawn to scale.

The process starts with a substrate 10 as shown in FIG. 1. The substrate10 comprises, for example, a silicon on insulator (SOI) substrateincluding a semiconductor substrate layer 12, an insulating (buriedoxide) layer 14 and a semiconductor layer 16. The SOI substrate may, forexample, be of a conventional SOI-type or comprise an extremely thinsilicon on insulator (ETSOI) type or an ultra-thin body and buried oxide(UTBB) silicon on insulator type as known to those skilled in the art.The semiconductor layer 16 may be formed of any suitable semiconductormaterial, including silicon or silicon-germanium, and may be doped asappropriate for the given transistor application. In an embodiment, theSOI substrate 10 may be of the fully-depleted type (known in the art bythe acronym FD-SOI). In an example implementation, the semiconductorsubstrate layer 12 may have a thickness of 500-800 nm, the insulating(buried oxide) layer 14 may have a thickness of 20-100 nm and thesemiconductor layer 16 may have a thickness of 6-20 nm. Techniques forfabricating SOI substrates are well known to those skilled in the artand SOI wafers for use in semiconductor fabrication processes areavailable from a number of known commercial sources.

Next, an active region 20 of the substrate 10 is delimited by theformation of shallow trench isolation (STI) structures 22. The result isshown in FIG. 2. Any suitable process known to those skilled in the artfor the formation of STI structures may be used. The active region isreserved for the formation of one or more transistor devices (forexample, of the MOSFET-type). The techniques described herein areapplicable to transistors of both the n-type and p-type of conductivity.

FIG. 3 shows the deposition of a high-k metal gate stack layer 26 on thetop surface of the semiconductor layer 16. The stack layer 26 may, forexample, comprise a pedestal high-k dielectric layer and a metal gateelectrode layer. For example, the high-k dielectric can be hafnium oxideor hafnium silicate, nitrided or not, deposited in a layer using MetalOrganic Chemical Vapor Deposition (MOCVD) or Atomic Layer Deposition(ALD), with a thickness from 2 to 5 nm. The metal gate electrode, suchas titanium nitride, may be deposited in a layer using Physical VaporDeposition (PVD) or Atomic Layer Deposition (ALD) with a thickness of2-20 nm.

A polysilicon layer 30 is then deposited on top of the high-k metal gatestack layer 26. The result is shown in FIG. 4. The polysilicon layer 30may be deposited using a low pressure chemical vapor deposition (LPCVD)process to a thickness of, for example, 20-60 nm. The polysilicon layer30 may be doped as necessary for the transistor application.

A hard mask layer 34 is then deposited on top of the polysilicon layer30. The hard mask layer 34 may, for example, comprise an oxide layer(made of silicon, oxide, hydrogen and nitrogen atoms) and depositedusing a plasma enhanced chemical vapor deposition (PECVD) process.Alternatively, the hard mask layer 34 may comprise a multi-layerstructure such as with an oxide-nitride-oxide stack of layers depositedusing a PECVD process. The hard mask layer 34 may, for example, have athickness of 20-70 nm. The result is shown in FIG. 5.

Using conventional photolithographic processing techniques known tothose skilled in the art, the hard mask layer 34 is patterned to definemasking portions 38 as shown in FIG. 6 at locations where a gate of thetransistor is desired.

An etching process (such as, for example, a reactive ion etch (RIE)) isthen used to remove the portions of the layers 26 and 30 which are notcovered by the masking portions 38 (thus exposing the top surface of thesemiconductor layer 16). The result of this etch is shown in FIG. 7 toform a gate stack 40 including a high-k/metal gate layer 42 (frompatterned layer 26), a polysilicon gate 44 (from patterned layer 30) anda cap (formed by the masking portion 38).

A conformal layer 50 of an insulating spacer material is then depositedover the substrate. The layer 50 may, for example, comprise a siliconnitride (Si₃N₄) material deposited using a low pressure chemical vapordeposition (LPCVD) process or atomic layer deposition (ALD) process witha thickness of 3-13 nm. The result is shown in FIG. 8.

An etching process (such as, for example, a reactive ion etch) is thenperformed which preferentially removes portions of the conformal layer50 which lie on horizontal surfaces of the wafer. The result of thisetch is shown in FIG. 9 to form sidewall spacers 52 on the side walls ofthe gate stack 40.

An epitaxial growth process as known to those skilled in the art is thenperformed to grow an epitaxial semiconductor layer 60 on the top surfaceof the semiconductor layer 16. The result is also shown in FIG. 9. Thelayer 60 may, for example, comprise silicon, silicon carbide or silicongermanium epitaxially grown to a thickness of 10-40 nm. The layer 60may, if desired, be in situ doped in accordance with the transistorapplication. The portions of the layer 60 on each side of the gate stack40 adjacent to the sidewall spacers 52 are provided to form raisedsource-drain regions 62 for the transistor. The channel of thetransistor is provided by the portion of the semiconductor layer 16located underneath the gate stack 40.

It is understood by those skilled in the art that the etching processfor preferential removal of the horizontal portions of the layer 50 maybe followed by a pre-epitaxial desoxidation (referred to as ahydrofluoric (HF) acid last processing step) which does not remove anymore of the layer 50 but effectuates a cleaning of the top surface ofthe semiconductor layer 16 in preparation for subsequent epitaxialgrowth.

It is noted that due to the presence of the raised source-drain regions62 with the sidewall spacers 52, the parasitic capacitance between thesource or drain region and the polysilcon gate 44 electrode can beunacceptably high because of the higher k silicon nitride dielectricmaterials typically used for the sidewall spacers 52, thus leading to aloss in dynamic performance of the transistor device.

There would be an advantage if the sidewall spacers 52 could be made ofa lower k dielectric material. The prior art notes the possible use ofrelatively-lower k dielectric materials in sidewall spacer formation.However, such materials often require a relatively high processtemperature (for example, >500° C.) which is disadvantageous withrespect to other processing steps. Still further, such relatively-lowerk dielectric materials (for example, silicon oxycarbonitride (SiOCN))can be damaged by the etch and desoxidation process steps. Indeed, suchmaterials can be converted from a lower k material (such as SiOCN) whichaddresses the concerns with parasitic capacitance to a higher k material(such as silicon dioxide) with a corresponding loss of the desired lowerk dielectric characteristic.

There is accordingly a need in the art to address the foregoing andother concerns with the fabricating of transistor devices with low-kdielectric sidewall spacers.

SUMMARY

In an embodiment, a process comprises: forming a gate stack on top of asemiconductor layer, said gate stack including a gate dielectric and agate electrode; forming a sacrificial sidewall spacer on each side ofthe gate stack; epitaxially growing raised source-drain regions on eachside of the gate stack adjacent the sacrificial sidewall spacers;removing the sacrificial sidewall spacers to produce openings betweeneach raised source-drain region and the gate stack; and filling theopenings with a dielectric material having a dielectric constant k<5.

In an embodiment, an integrated circuit comprises: a substrate; a gatestack on top of the substrate, said gate stack including a gatedielectric and a gate electrode; raised source-drain regions on eachside of the gate stack, wherein each raised source-drain region isseparated from a side of the gate stack by a space; and a dielectricmaterial having a dielectric constant k<5 that fills the spaces betweenthe sides of the gate stack and each raised source-drain region.

In an embodiment, a process comprises: defining a gate stack on top of asemiconductor layer, said gate stack including a gate dielectric and agate electrode; depositing a layer of a first dielectric material havinga first dielectric constant on side walls of the gate stack to formsacrificial sidewall spacers; epitaxially growing raised source-drainregions on each side of the gate stack adjacent the sacrificial sidewallspacers; removing the sacrificial sidewall spacers to produce openingsbetween each raised source-drain region and the gate stack; anddepositing a layer of a second dielectric material having a seconddielectric constant less than the first dielectric constant in saidopenings and on side walls of the gate stack to form low-k sidewallspacers.

In an embodiment, an integrated circuit comprises: a semiconductor layeron insulator substrate; a gate stack over the semiconductor layer oninsulator substrate, said gate stack including a gate dielectric and agate electrode; raised source-drain regions extending from an uppersurface of the semiconductor layer on insulator substrate on each sideof the gate stack; and a dielectric material having a dielectricconstant k<5 positioned between a sidewall of the gate stack and aninner edge of the raised source-drain regions adjacent the gate stack.

BRIEF DESCRIPTION OF THE DRAWINGS

For a better understanding of the embodiments, reference will now bemade by way of example only to the accompanying figures in which:

FIGS. 1-9 show process steps for the formation of a MOSFET transistor;and

FIGS. 10-19 show further process steps for fabricating a MOSFETtransistor in accordance with an embodiment.

DETAILED DESCRIPTION

Reference is now additionally made to FIGS. 10-19 showing furtherprocess steps for fabricating an integrated circuit transistor devicecomprising a MOSFET transistor. It will be understood that theillustrations provided do not necessarily show the features drawn toscale.

The process steps shown in FIGS. 1-9 are incorporated by reference. Theprocess embodiment described herein is a continuation of the processillustrated by FIGS. 1-9. As a distinction over the processingtechniques described above, the sidewall spacers 52 formed in FIGS. 8and 9 comprise sacrificial sidewall spacer structures.

Continuing from FIG. 9, the sacrificial sidewall spacers 52 are removedusing a preferential etch process. The etch may, for example, comprise awet etch such as an H₃PO₄ (wet chemistry) etch or a diluted HF etch. Theresult is shown in FIG. 10, where the removal of the sacrificialsidewall spacers 52 leaves sidewall openings 66 defining spaces betweenthe gate stack 40 and the adjacent raised source-drain regions 62. Theopenings 66 extend down to the top surface of the semiconductor layer16.

A conformal layer 70 of an insulating spacer material is then depositedover the substrate. The layer 70 may, for example, comprise a low-kdielectric material (preferably, with a dielectric constant k<5) such asa silicon oxycarbonitride (SiOCN) material, a silicon carbon oxide(SiCO) material, a silicon carbon nitride (SiCN) or a silicon boroncarbon nitride (SiBCN) material deposited using a plasma enhanced atomiclayer deposition (PEALD) process, an atomic layer deposition (ALD)process, a low pressure chemical vapor deposition (LPCVD) process or aplasma enhanced chemical vapor deposition (PECVD) process with athickness of 3-13 nm. The result is shown in FIG. 11. It will be notedthat the layer 70 fills the sidewall openings 66 and is thus positionedin the spaces between the sides of the gate stack and each raisedsource-drain region 62.

An etching process (such as, for example, a reactive ion etch) is thenperformed which preferentially removes portions of the conformal layer70 which lie on horizontal surfaces. The result of this etch is shown inFIG. 12 to form low-k dielectric material sidewall spacers 72 on theside walls of the gate stack 40.

If the raised source-drain regions 62 were not previously in situ dopedduring the epitaxial growth process, at this point in the transistorfabrication process a dopant implantation may be performed.

The process then continues to finish fabrication of the transistor whichincludes low-k dielectric sidewall spacers 72. A silicide protection(SiPROT) technique as known to those skilled in the art is used todefine SiPROT spacers 80 on each side of the sidewall spacers 72. Thespacers 80 are formed, for example, of a conformal oxide (reference 82)deposition adjacent the sidewall spacers 72 and a conformal nitride(reference 84) deposition on the oxide deposition. Using a mask andpreferential etch, portions of the conformal deposits which are notalong and adjacent the sidewall spacers 72 are removed so as to expose atop surface of the source-drain regions 62. This etch will additionallyremove the cap formed by the masking portion 38 of the gate stack 40 soas to expose a top surface of the polysilicon gate 44. The result isshown in FIG. 13.

It is understood by those skilled in the art that the etching processfor preferential removal of the horizontal portions of the conformaloxide and nitride layers may be followed by a pre-salicidationdesoxidation (referred to as a hydrofluoric (HF) acid last processingstep) which does not remove any more of the spacers 80 but effectuates acleaning of the top surfaces of the semiconductor layer 16 andpolysilicon gate 44 in preparation for subsequent silicide formation. Itwill be recognized that the SiPROT spacers 80 serve to protect the low-kdielectric material sidewall spacers 72 (especially in the regionbetween the gate stack 40 and the source-drain regions 62) from damagefrom this acid process step which would otherwise adversely affect thelow-k dielectric characteristic of the spacer material. Damage at theupper portions of the low-k dielectric material sidewall spacers 72(near the top surface of the polysilicon gate 44) from the HF last cleanis of less consequence because of its remote location relative to thesource-drain regions 62.

A metal layer 90 is then conformally deposited at least over the activeregion to cover the source-drain regions 62 and the polysilicon gate 44(as well as the SiPROT spacers 80). The layer 90 may comprise, forexample, an alloy of nickel (Ni) and platinum (Pt) deposited using aphysical vapor deposition process with a thickness of 5-40 nm. Theresult is shown in FIG. 14.

A first rapid thermal anneal (RTA) is then performed to convert theupper surfaces of the semiconductor layer 16 and polysilicon gate 44 toa metal silicide 94 (for example, NiSi, NiSiC or NiSiGe depending on thenature of the underlying silicon-based material). The result is shown inFIG. 15.

The un-reacted portion of the metal layer 90 is then removed using aselective wet etching process. A second rapid thermal anneal (RTA) isthen performed to complete formation of silicide regions 96. The resultis shown in FIG. 16.

A contact etch stop layer 100 is then conformally deposited. The layer100 may, for example, comprise silicon nitride or silicon carbidenitride deposited using a PECVD process with a thickness of 10-40 nm.The result is shown in FIG. 17.

A pre-metal dielectric layer 104 is then deposited and its top surfacepolished to provide a planar surface. The layer 104 may, for example, bemade of a silicon oxide material with a planarized thickness of 50-500nm. The result is shown in FIG. 18.

Using conventional contact formation techniques, openings are etchedthrough the pre-metal dielectric layer 104 to reach the silicide regions96. These openings are then lined and filled with a metal material (forexample, tungsten) to form source, drain and gate contacts 108 for thetransistor. The result is shown in FIG. 19.

While the implementation described above is presented in the context offabricating a planar MOSFET device, it will be understood that thetechnique for replacement of a sacrificial sidewall spacer with a low-ksidewall spacer is equally applicable to the fabrication of many othertransistor types such as for transistors used in flash-type memories,bipolar transistors or FINFET devices.

Although making and using various embodiments are discussed in detailherein, it should be appreciated that as described herein are providedmany inventive concepts that may be embodied in a wide variety ofcontexts. Embodiments discussed herein are merely representative and donot limit the scope of the invention.

While the invention has been illustrated and described in detail in thedrawings and foregoing description, such illustration and descriptionare considered illustrative or exemplary and not restrictive; theinvention is not limited to the disclosed embodiments. Other variationsto the disclosed embodiments can be understood and effected by thoseskilled in the art in practicing the claimed invention, from a study ofthe drawings, the disclosure, and the appended claims.

What is claimed is:
 1. An integrated circuit, comprising: a substrate; agate stack on top of the substrate, said gate stack including a gatedielectric and a gate electrode; raised source-drain regions on eachside of the gate stack, wherein each raised source-drain region isseparated from a side of the gate stack by a space; and a dielectricmaterial having a dielectric constant k<5 that fills the spaces betweenthe sides of the gate stack and each raised source-drain region; whereinthe dielectric material having the dielectric constant k<5 is selectedfrom the group consisting of: a silicon oxycarbonitride (SiOCN)material, a silicon carbon oxide (SiCO) material, a silicon carbonnitride (SiCN) and a silicon boron carbon nitride (SiBCN) material. 2.The integrated circuit of claim 1, wherein the substrate comprises asemiconductor layer of a silicon on insulator (SOI) substrate.
 3. Theintegrated circuit of claim 1, further comprising a silicide region onan upper surface of the gate electrode.
 4. The integrated circuit ofclaim 1, further comprising a silicide region on an upper surface ofeach raised source-drain region.
 5. The integrated circuit of claim 1,wherein the gate electrode and raised source-drain regions are portionsof a MOSFET.
 6. An integrated circuit, comprising: a semiconductor layeron insulator substrate; a gate stack over the semiconductor layer oninsulator substrate, said gate stack including a gate dielectric and agate electrode; raised source-drain regions extending from an uppersurface of the semiconductor layer on insulator substrate on each sideof the gate stack; and a dielectric material having a dielectricconstant k<5 positioned between a sidewall of the gate stack and aninner edge of the raised source-drain regions adjacent the gate stack;where said dielectric material having a dielectric constant k<5 isselected from the group consisting of: a silicon oxycarbonitride (SiOCN)material, a silicon carbon oxide (SiCO) material, a silicon carbonnitride (SiCN) and a silicon boron carbon nitride (SiBCN) material. 7.The integrated circuit of claim 6, further comprising a silicide regionon an upper surface of at least one of the gate electrode and eachraised source-drain region.
 8. An integrated circuit, comprising: asemiconductor layer on insulator substrate; a gate stack over thesemiconductor layer on insulator substrate, said gate stack including agate dielectric and a gate electrode; raised source-drain regionsextending from an upper surface of the semiconductor layer on insulatorsubstrate on each side of the gate stack; and a dielectric materialhaving a dielectric constant k<5 positioned between a sidewall of thegate stack and an inner edge of the raised source-drain regions adjacentthe gate stack; wherein said dielectric material having the dielectricconstant k<5 is further positioned at an outer edge of the raisedsource-drain regions opposite from said inner edge of the raisedsource-drain regions.
 9. The integrated circuit of claim 8, furthercomprising trench isolation regions formed in the semiconductor layer oninsulator substrate, wherein an edge of said trench isolation regions isaligned with the outer edge of the raised source-drain regions.
 10. Anintegrated circuit, comprising: a semiconductor layer on insulatorsubstrate; a gate stack over the semiconductor layer on insulatorsubstrate, said gate stack including a gate dielectric and a gateelectrode; raised source-drain regions extending from an upper surfaceof the semiconductor layer on insulator substrate on each side of thegate stack; and a dielectric material having a dielectric constant k<5positioned between a sidewall of the gate stack and an inner edge of theraised source-drain regions adjacent the gate stack; wherein a portionof said dielectric material having the dielectric constant k<5 extendsover a top surface of the raised source-drain regions.
 11. Theintegrated circuit of claim 10, further comprising sidewall spacerstructures provided on sidewalls of said dielectric material having thedielectric constant k<5 and the top surface of the raised source-drainregions.
 12. The integrated circuit of claim 6, wherein the gateelectrode and raised source-drain regions are portions of a MOSFET. 13.The integrated circuit of claim 8, wherein the gate electrode and raisedsource-drain regions are portions of a MOSFET.
 14. The integratedcircuit of claim 10, wherein the gate electrode and raised source-drainregions are portions of a MOSFET.